Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29294
Reexamination Certificate
active
06995429
ABSTRACT:
A semiconductor device in accordance with the present invention is equipped with a gate electrode10formed on a BOX layer2,a gate oxide film11formed on the gate electrode, a body region12acomposed of epitaxial Si formed on the gate oxide film, diffusion layers18and19for source/drain regions formed on both sides of the body region, and a body terminal connected to the body region for applying a specified potential to the body region. As a result, the substrate floating effect is suppressed even in a transistor having a short gate length and a long gate width.
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Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Smoot Stephen W.
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