Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-21
2006-02-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S354000, C257S357000, C257S691000, C257S758000, C257S622000, C257S664000, C257S750000, C257S776000, C438S019000, C438S125000, C438S622000, C438S652000, C438S666000
Reexamination Certificate
active
07002215
ABSTRACT:
Methods and apparatuses are provided for protecting an interconnect line in a microelectromechanical system. The interconnect line is disposed over a substrate for conducting electrical signals, such as from a bonding pad to a mechanical component to effect movement as desired of the mechanical component. A first protective covering is disposed over a first portion of the interconnect line and a second protective covering is disposed over a second portion of the interconnect line. The first protective covering is provided in electrical communication with the substrate and the second protective covering is electrically isolated from the substrate.
REFERENCES:
patent: 5212582 (1993-05-01), Nelson
patent: 5600383 (1997-02-01), Hornbeck
patent: 5847381 (1998-12-01), Isogai
patent: 5960133 (1999-09-01), Tomlinson
patent: 5981384 (1999-11-01), Juengling
patent: 6028689 (2000-02-01), Michalicek et al.
patent: 6040935 (2000-03-01), Michalicek
patent: 6128122 (2000-10-01), Drake et al.
patent: 6140144 (2000-10-01), Najafi et al.
patent: 6232150 (2001-05-01), Lin et al.
patent: 6307657 (2001-10-01), Ford
patent: 6346189 (2002-02-01), Dai et al.
patent: 6352933 (2002-03-01), Forbes et al.
patent: 6437432 (2002-08-01), Ikumo et al.
patent: 6469330 (2002-10-01), Vigna et al.
patent: 6747340 (2004-06-01), Barnes et al.
patent: 6808384 (2004-10-01), Jordan et al.
patent: 2001/0021570 (2001-09-01), Lin et al.
patent: 2003/0173112 (2003-09-01), Barnes et al.
patent: 2003/0174929 (2003-09-01), Roders et al.
U.S. Appl. No. 10/216,600, filed Aug. 9, 2002, Anderson et al.
Akiyama, Terunobu et al., Controlled Stepwise Motion in Polysilicon Microstrutures, Journal of Microelectromechanical Systems, vol. 2, No. 1, Sep. 1, 1993, pp 106-110.
Ashruf, C.M.A. et al. Galvanic Porous Silicon Formation Without External Contracts, Elsevier Science S.A.., Sensors and Actuators 74 (1999), pp.. 118-122.
Bean, Kenneth E., Anisotropic Etching of Silicon, IEEE Transactions on Electron Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1185-1193.
Ciarlo, Dino R., A Latching Accelerometer Fabricated by the Anisotropic Etching of (110) Oriented Silicon Wafers, 1860-1317/92/010010+04104.50, Mar. 1992 IOP Publishing Ltd.
Dewa, Andrew S., et al., Development of a Silicon Two-Axis Micromirror for an Optical Cross-Connect, Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, Jun. 4-6, 2000, pp. 93-96.
Ford, Joseph E. et al., Wavelength Add-Drop Switching Using Tilting Micromirrors, Journal of Lightwave Technology, vol. 17, No. 5, May 1999, pp. 904-911.
Grade, John D., et al., A Large-Deflection Electrostatic Actuator for Optical Switching Applications, Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, Jun. 4-6, 2000, pp. 97-100.
Hopkins, Robert E., Some Thoughts on Lens Mounting, Optical Engineering, vol. 15, No. 5, Sep.-Oct. 1976, pp. 428-430.
Kaajakari, Ville, et al., Ultrasonic Actuation for MEMS Dormancy-Related Stiction Reduction, in MEMS Reliability for Critical Applications, Proceedings of SPIE vol. 4180, 2000, pp. 60-65.
Koch, T.L. et al., Anisotropically Etched Deep Gratings for InP/InGaAsP Optical Devices, Journal of Applied Physics 62 (8), Oct. 15, 1987, pp. 3461-3463.
Schilling, M. et al., Deformation-Free Overgrowth of Reactive Ion Beam Etched Submicron Structures in InP by Liquid Phase Epitaxy, Applied Physics Lett. 49 (12), Sep. 22, 1986, pp. 710-712.
Tang William C., et al., Electrostatically Balanced Comb Drive for Controlled Levitation, Reprinted from Technical Digest IEEE Solid-State Sensor and Actuator Workshop, Jun. 1990, pp. 198-202.
Torcheux, L. et al., Electrochemical Coupling Effects on the Corrosion of Silicon Samples in HF Solutions, J. Electrochem. Soc., vol. 142, No. 6, Jun. 1995, pp. 2037-2046.
Van Kessel, Peter F. et al., A MEMS-Based Projection Display, Proceedings of the IEEE, vol. 86, No. 8, Aug. 1998, pp. 1687-1704.
Keller, Christopher, Microfabricated Silicon High Aspect Ratio Flextures for In-Plane Motion, Dissertation submitted to University of California, Berkeley, Fall 1998.
Muller, Lilac, Gimballed Electrostatic Microactuators with Embedded Interconnects, Dissertation submitted to University of California, Berkeley, Spring. 2000.
Erdem Fazli
Flynn Nathan J.
PTS Corporation
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