Semiconductor memory with trench capacitor and method of...

Details Semiconductor memory with trench capacitor and method of... Semiconductor memory with trench capacitor and method of...

2006-08-15

2006-08-15

Fourson, George R. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S296000, C257S303000, C257S306000, C257S532000

Reexamination Certificate

active

07091546

ABSTRACT:
A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor formed so as to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.

REFERENCES:
patent: 6310359 (2001-10-01), Chaloux et al.
patent: 6528383 (2003-03-01), Chakravarti et al.
patent: 2002/0158281 (2002-10-01), Goldbach et al.
patent: 2003/0030091 (2003-02-01), Bulsara et al.
patent: 7-202026 (1995-08-01), None
patent: 2000-31412 (2000-01-01), None

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