Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2006-05-16
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S299000
Reexamination Certificate
active
07045843
ABSTRACT:
Disclosed herein is a latchable MEMS switch device capable of retaining its ON or OFF state even after the external power source is turned off. It is unnecessary not only to introduce novel materials such as magnetic material but also to form complicated structures. At least one of the cantilever and pull-down electrode of a cold switch is connected to a second MEMS switch. A capacitor between the cantilever and pull-down electrode of the cold switch is charged by the second MEMS switch. Thereafter since the cold switch is isolated in the device, the charge remains stored. Therefore, the cold switch can remain in the ON state since the charge continues to create electrostatic attraction between the cantilever and the pull-down electrode.
REFERENCES:
patent: 5774414 (1998-06-01), Melzner et al.
patent: 6124650 (2000-09-01), Bishop et al.
patent: 6625047 (2003-09-01), Coleman, Jr.
patent: 9-63293 (1996-08-01), None
patent: 2001-176369 (2000-10-01), None
Goto Yasushi
Machida Shuntaro
Yokoyama Natsuki
A. Marquez, Esq. Juan Carlos
Cao Phat X.
Doan Theresa T.
Fisher Esq. Stanley P.
Hitachi , Ltd.
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