Semiconductor wafer package and manufacturing method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21508

Reexamination Certificate

active

07122459

ABSTRACT:
A manufacturing method of a semiconductor wafer package mainly comprises the following steps. Firstly, a semiconductor wafer having a plurality of bonding pads and a passivation layer exposing the bonding pads is provided. Next, under bump metallurgy layers are formed on each of the bonding pads respectively. Then, a mask is formed above the semiconductor wafer to expose the under bump metallurgy layers through each of the openings of the mask. Afterwards, a plurality of bump structures are disposed separately in the openings wherein each of the bump structures has a bump and a reinforced layer covering the bump. Finally, a reflow step is performed so that each of the reflowed bumps is connected to the corresponding under bump metallurgy layer and the reinforced layers are transformed into bump-reinforced collars to cover the under bump metallurgy layers and encompass the bumps. In addition, a semiconductor wafer package, which is formed by the manufacturing method, is provided.

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