Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S286000, C257SE21417
Reexamination Certificate
active
07122861
ABSTRACT:
The present invention relates to a semiconductor device including a high withstand voltage MOS transistor and a manufacturing method thereof. The semiconductor device according to the present invention includes a MOS transistor in which a second-conductivity type source region is formed on a first-conductivity type semiconductor region, an offset drain region is interconnected to a second-conductivity type drain region and has a concentration lower than an impurity concentration of a drain region, the offset drain region is composed of a portion that does not overlap a first-conductivity type semiconductor region and a portion that overlaps part of the surface of the first-conductivity type semiconductor region and a gate electrode is formed on the surface extending from a channel region between the source region and the offset drain region to part of the offset drain region through a gate insulating film.Thus, there can be obtained an offset drain type MOS transistor having a stable threshold voltage Vth and a low ON-state resistance.
REFERENCES:
patent: 4628341 (1986-12-01), Thomas
patent: 5844275 (1998-12-01), Kitamura et al.
patent: 5917217 (1999-06-01), Kitamura et al.
patent: 5932897 (1999-08-01), Kawaguchi et al.
patent: 6380566 (2002-04-01), Matsudai et al.
patent: 2001/0012671 (2001-08-01), Hoshino
patent: 0179693 (1986-04-01), None
patent: 0849801 (1998-06-01), None
patent: 53-67373 (1978-06-01), None
patent: 61-88553 (1986-05-01), None
patent: 06-21441 (1994-01-01), None
patent: 10-189762 (1998-07-01), None
patent: 2001-94094 (2001-04-01), None
Chaudhari Chandra
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3646825