Preferential lateral silicidation of gate with low source and dr

Details Preferential lateral silicidation of gate with low source and dr Preferential lateral silicidation of gate with low source and dr

1998-04-15

2000-04-04

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438303, 438305, 438299, 438664, 438683, H01L 2128

Patent

active

060461055

ABSTRACT:
Method of forming a salicide on a gate structure uses sidewall spacers which leave at least 30 percent of the gate sidewall exposed. After metal deposition, which has at least 50 percent step coverage, an anisotropic etch removes some or all of the metal on horizontal surfaces. Silicides formed from this metal layer are conformal, or even thicker on the sides of the gate than on horizontal structures. This achieves low sheet resistance on the gate, while remaining compatible with shallow junctions.

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