Method of ultra-low energy ion implantation to form alloy...

Details Method of ultra-low energy ion implantation to form alloy... Method of ultra-low energy ion implantation to form alloy...

2006-10-03

2006-10-03

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S643000, C438S644000, C438S648000, C438S653000, C438S654000, C438S656000, C438S658000, C438S659000, C438S687000

Reexamination Certificate

active

07115498

ABSTRACT:
A method of fabricating an integrated circuit can include forming a barrier layer along lateral side walls and a bottom of a via aperture, forming a seed layer proximate and conformal to the barrier layer, and ion implanting elements into the seed layer. The via aperture is configured to receive a via material that electrically connects a first conductive layer and a second conductive layer.

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