Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Nguyen, Dao H. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S026000, C365S185180
Reexamination Certificate
active
07115942
ABSTRACT:
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5095344 (1992-03-01), Harari
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5268319 (1993-12-01), Harari
patent: 5280446 (1994-01-01), Ma et al.
patent: 5286994 (1994-02-01), Ozawa et al.
patent: 5429965 (1995-07-01), Shimoji
patent: 5432739 (1995-07-01), Pein
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5563083 (1996-10-01), Pein
patent: 5714766 (1998-02-01), Chen et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5780341 (1998-07-01), Ogura
patent: 5822242 (1998-10-01), Chen
patent: 5838039 (1998-11-01), Sato et al.
patent: 5847427 (1998-12-01), Hagiwara
patent: 5847996 (1998-12-01), Guterman et al.
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5973356 (1999-10-01), Noble et al.
patent: 6002152 (1999-12-01), Guterman et al.
patent: 6080995 (2000-06-01), Nomoto
patent: 6088263 (2000-07-01), Liu et al.
patent: 6091104 (2000-07-01), Chen
patent: 6103573 (2000-08-01), Harari
patent: 6104057 (2000-08-01), Nakanishi et al.
patent: 6313487 (2001-11-01), Kencke et al.
patent: 6384451 (2002-05-01), Caywood
patent: 6388922 (2002-05-01), Fujiwara et al.
patent: 6426896 (2002-07-01), Chen
patent: 6449189 (2002-09-01), Mihnea et al.
patent: 6469343 (2002-10-01), Miura et al.
patent: 6525371 (2003-02-01), Johnson
patent: 6555865 (2003-04-01), Lee
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6580642 (2003-06-01), Wang
patent: 6680505 (2004-01-01), Ohba et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 6734105 (2004-05-01), Kim
patent: 6747310 (2004-06-01), Fan
patent: 6756633 (2004-06-01), Wang et al.
patent: 6791883 (2004-09-01), Swift et al.
patent: 6952032 (2005-10-01), Forbes et al.
U.S. Appl. No. 10/105,741, filed Sep. 25, 2000, Kianian et al.
U.S. Appl. No. 10/192,291, filed Jul. 24, 2003, Wang.
U.S. Appl. No. 09/925,134, filed Jan. 1, 2004, Harari et al.
U.S. Appl. No. 10/791,486, filed Aug. 26, 2004, Harari.
U.S. Appl. No. 10/776,483, filed Aug. 19, 2004, Kianian et al.
U.S. Appl. No. 10/799,180, filed Sep. 9, 2004, Yuan et al.
U.S. Appl. No. 10/718,662, filed Jul. 8, 2004, Kan et al.
U.S. Appl. No. 09/862,078, filed Jan. 24, 2002, Chen.
U.S. Appl. No. 09/942,338, filed Feb. 5, 2004, Caywood.
U.S. Appl. No. 09/955,285, filed Dec. 5, 2002, Kim.
U.S. Appl. No. 09/881,332, filed Dec. 19, 2002, Jones et al.
U.S. Appl. No. 10/330,851, filed Jul. 3, 2003, Lee et al.
U.S. Appl. No. 10/348,267, filed Jul. 17, 2003, Jones et al.
U.S. Appl. No. 10/643,724, filed May 27, 2004, Cho.
U.S. Appl. No. 10/388,631, filed Sep. 23, 2004, Bae et al.
U.S. Appl. No. 10/457,249, filed Dec. 9, 2004, Wang.
U.S. Appl. No. 10/040,724, filed May 1, 2003, Wang et al.
U.S. Appl. No. 10/409,407, filed Oct. 7, 2004, Chen et al.
U.S. Appl. No. 10/797,296, filed Dec. 16, 2004, Lee et al.
U.S. Appl. No. 10/850,031, filed Oct. 28, 2004, Wang et al.
U.S. Appl. No. 10/848,982, filed Oct. 28, 2004, Wang.
C. A. Mead, “The Tunnel-Emission Amplifier”, Proceedings of the IRE, pp. 359-361, 1960.
Fischetti et al., “Six-band k.p calculation of hole mobility in silicon inversion layers: depedence on surface . . . ,” Journal of Appl. Physics, vol. 94, pp. 1079-1095, 2003.
Hensel et al., Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation . . . , Phys. Rev. 129, pp. 1141-1062, 1963.
Vogelsang et al., “Electron Mobilities and High-Field Drift Velocity in Strained Silicon on Silicon-Germanium Substrate”, IEEE Trans. on Electron Devices, pp. 2641-2642, 1992.
Hinckley et al., “Hole Transport Theory in Pseudomorphic Si1-xGex Alloys Grown on Si(001) Substrates, ” Phys. Rev. B, 41, pp. 2912-2926, 1990.
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