Magnetic memory apparatus and method of manufacturing...

Details Magnetic memory apparatus and method of manufacturing... Magnetic memory apparatus and method of manufacturing...

2006-08-08

2006-08-08

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07088610

ABSTRACT:
A magnetic memory apparatus including a memory cell region and a peripheral circuitry region mounted on a substrate is provided. The memory cell region includes first wiring, second wiring that three-dimensionally intersects with the first wiring, and a magnetoresistance effect type memory device disposed in an intersecting region of the first and the second wiring for storing and reproducing information of a magnetic spin. The peripheral circuitry region includes first wiring that is in the same wiring layer as that of the first wiring in the memory cell region, and second wiring that is in the same wiring layer as the second wiring in the memory cell, and a magnetic material layer including a high magnetic permeability layer is formed on both side surfaces of the first wiring only within the memory cell region and on a surface opposite to a surface facing the memory device.

REFERENCES:
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patent: 6555858 (2003-04-01), Jones et al.
patent: 6724651 (2004-04-01), Hirai
Wang, et al., “Feasibility of Ultra-Dense Spin-Tunneling Random Access Memory”, IEEE Transaction on Magnetics 33 [6], Nov. 1997, p. 4498-4512.
R. Scheuerlein et al, “TA7.2 A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, 2000 IEEE International Soild-State Circuits Conference Digest of Papers (Feb. 2000) p. 129-129.
EPO Search Report mailed Mar. 30, 2005.

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