Magnetic random access memory including middle oxide layer...

Details Magnetic random access memory including middle oxide layer... Magnetic random access memory including middle oxide layer...

2006-06-13

2006-06-13

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C438S253000, C438S257000, C438S593000

Reexamination Certificate

active

07061034

ABSTRACT:
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.

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Inomata, “Present and Future of Magnetic RAM Technology”, IEICE Transactions on Electronics, Institute of Electronics Information and Comm. Eng., Tokyo, JP vol. E84-C, No. 6, pp. 740-746 (Jun. 2001).

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