Semiconductor device and a method of producing the same

Details Semiconductor device and a method of producing the same Semiconductor device and a method of producing the same

2006-10-24

2006-10-24

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257S521000

Reexamination Certificate

active

07126187

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.

REFERENCES:
patent: 5610422 (1997-03-01), Yanagiya et al.
patent: 6274905 (2001-08-01), Mo
patent: 6285058 (2001-09-01), Narazaki et al.
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6620669 (2003-09-01), Hijzen et al.
patent: 2002/0167046 (2002-11-01), Aoki et al.
patent: A-10-214968 (1998-08-01), None
patent: A-10-256545 (1998-09-01), None

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