Method and apparatus for forming a thin semiconductor film,...

Details Method and apparatus for forming a thin semiconductor film,... Method and apparatus for forming a thin semiconductor film,...

2006-08-29

2006-08-29

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S488000, C438S745000

Reexamination Certificate

active

07098085

ABSTRACT:
A method is disclosed for forming high-quality high-crystallinity polycrystalline or monocrystalline thin semiconductor film. The method is capable of forming such a semiconductor film over a large area at low cost. An apparatus for practicing the method is also disclosed. To form a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film on a substrate, or to produce a semiconductor device including a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film disposed on a substrate, a low-crystal-quality thin semiconductor film is first formed on the substrate, and then focused-light annealing is performed on the low-crystal-quality thin semiconductor film thereby melting or semi-melting the low-crystal-quality thin semiconductor film. The focused-light annealing allows enhancement of crystallization that occurs when the melted low-crystal-quality thin semiconductor film is cooled, and thus the low-crystal-quality thin semiconductor film is converted into a high-quality polycrystalline (or monocrystalline) thin semiconductor film.

REFERENCES:
patent: 6693044 (2004-02-01), Yamazaki et al.

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