Process for sealing plasma-damaged, porous low-k materials

Details Process for sealing plasma-damaged, porous low-k materials Process for sealing plasma-damaged, porous low-k materials

2006-11-21

2006-11-21

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000, C438S789000

Reexamination Certificate

active

07138333

ABSTRACT:
The invention relates to a process for sealing plasma-damaged, porous low-k materials on Si substrates, in which self-aligning molecules (SAMs) are applied to the low-k material, and then a diffusion barrier is applied to the low-k material. The invention is based on the object of providing a process for sealing plasma-damaged, porous low-k materials on Si substrates, which allows an improved distribution of the SAMs to be achieved, in particular in the case of structures with a high aspect ratio, and which allows the low-k materials to be repaired, dewatered and sealed. According to the invention, this is achieved by virtue of the fact that the deposition of the SAMs is carried out using a supercritical CO2process (scCO2process), by the wafers being introduced into a process chamber, that CO2and SAMs are introduced into the process chamber and the process chamber is pressurized, that the wafers are heated to a temperature of over 35° C. up to 300° C., and that the ambient conditions in the process chamber are maintained for a predetermined period of time.

REFERENCES:
patent: 6764809 (2004-07-01), DeSimone et al.
patent: 6919636 (2005-07-01), Ryan
patent: 2001/0051420 (2001-12-01), Besser et al.
patent: 2003/0198895 (2003-10-01), Toma et al.
patent: 2005/0077597 (2005-04-01), Toma et al.
patent: WO 01/54190 (2001-07-01), None
patent: WO 2004/000960 (2003-12-01), None

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