Method for creating alternating phase masks

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C430S005000, C378S035000, C700S120000, C700S121000

Reexamination Certificate

active

07143390

ABSTRACT:
A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions (10) with a different phase are defined on both sides of critical structures (6), which fall below an extent limit. At least one phase shifter correction is carried out such that at least two mutually facing phase-shifting regions (10) are joined together to form a contiguous phase-shifting region (10) if their distance from one another falls below a predetermined minimum distance.

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Socha et al., “Models for Characterizing Phase-Shift Defects in Optical Projection Printing”, IEEE Transactions on Semiconductor Manufacturing, vol. 8, No. 2, May 1995, pp. 139-149.

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