Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-14
2006-02-14
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
06998668
ABSTRACT:
A semiconductor integrated circuit device is provided, in which a node from which an output signal of a level shifter is sent can be initialized such that the potential thereof be set at a desired logic level at the time of power supply.The semiconductor integrated circuit device includes a level shifter6and two capacitors N10and C0. The level shifter6receives an input signal and converts the received signal to a signal having a voltage amplitude greater than that of the received signal, then to provide the signal to a node D3. The capacitor N10is connected to the node D3, and the capacitor C0is connected in series with the capacitor N10. The capacitor N10is formed of a MOS transistor having a gate connected to the node D3and a source and a drain both connected to the capacitor C0.
REFERENCES:
patent: 4791463 (1988-12-01), Malhi
patent: 5528172 (1996-06-01), Sundstrom
patent: 5818258 (1998-10-01), Choi
patent: 6621128 (2003-09-01), Lee et al.
patent: 2000-228627 (2000-08-01), None
patent: 2000-228628 (2000-08-01), None
Nakase Yasunobu
Notani Hiromi
Flynn Nathan J.
Quinto Kevin
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit device including a level... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device including a level..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device including a level... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3640405