Semiconductor device including power MOS field-effect...

Details Semiconductor device including power MOS field-effect... Semiconductor device including power MOS field-effect...

2006-11-21

2006-11-21

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S206000, C257SE27110

Reexamination Certificate

active

07138698

ABSTRACT:
A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.

REFERENCES:
patent: 6278264 (2001-08-01), Burstein et al.
patent: 2004/0159891 (2004-08-01), Nakamura et al.
MAX1710 evaluations kit, “Products Catalogue: Maxim Integrated Products”, Maxim Japan K.K., 1998, pp. 1-10.

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