Method of fabricating a compound semiconductor layer

Details Method of fabricating a compound semiconductor layer Method of fabricating a compound semiconductor layer

2006-11-07

2006-11-07

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21388, C257SE21108, C257SE21117, C257SE21126

Reexamination Certificate

active

07132351

ABSTRACT:
A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable material to an oxide layer and forming a third layer made of compound semiconductor that constitutes a semiconductor element on the second layer.

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