Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-11-21

2006-11-21

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129

Reexamination Certificate

active

07138679

ABSTRACT:
A semiconductor memory device comprises a silicon substrate having a main surface, a trench formed on the silicon substrate to open in the main surface and a memory cell formed on the trench. The memory cell includes a first storage holding part formed on a first side wall of the trench, a second storage holding part formed on a second side wall of the trench, impurity diffusion layers formed on both sides of the trench and a gate electrode formed to extend from the trench onto the impurity diffusion layers for covering the first and second storage holding parts.

REFERENCES:
patent: 5460988 (1995-10-01), Hong
patent: 5554550 (1996-09-01), Yang
patent: 5739567 (1998-04-01), Wong
patent: 6486028 (2002-11-01), Chang et al.
patent: 6548856 (2003-04-01), Lin et al.
patent: 6794249 (2004-09-01), Palm et al.
patent: 6861685 (2005-03-01), Choi
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2004/0041214 (2004-03-01), Prall
patent: 2004/0094781 (2004-05-01), Hsiao et al.
patent: 2005/0030780 (2005-02-01), Deppe et al.
patent: 2005/0133860 (2005-06-01), Forbes
patent: 2005/0164456 (2005-07-01), Deppe et al.
patent: 2002-237540 (2002-08-01), None

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