Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-02-07

2006-02-07

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S386000, C257S407000

Reexamination Certificate

active

06995434

ABSTRACT:
A semiconductor device capable of suppressing increase of the capacitance while suppressing a thin-line effect of a silicide film is obtained. This semiconductor device comprises a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode and a first silicide film formed on the first silicon layer for serving as the gate electrode.

REFERENCES:
patent: 6703672 (2004-03-01), Brigham et al.
patent: 05-48098 (1993-02-01), None
patent: P2000-22150 (2000-01-01), None

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