Method of manufacturing semiconductor device using a laser...

Details Method of manufacturing semiconductor device using a laser... Method of manufacturing semiconductor device using a laser...

Filed on

2006-05-02

Date issued

2006-05-02

Examiner

Zarneke, David (Department: 2829)

Patent Class

Semiconductor device manufacturing: process

SubClass

Formation of semiconductive active region on any substrate

Other Related Categories

C438S795000

Type

Reexamination Certificate

Status

active

Patent number

07037809

Description

ABSTRACT:
The present invention provides a semiconductor device manufacturing method where a beam spot is formed by having respective beam spots of a plurality of laser lights overlap each other on a semiconductor film using an optical system. Crystallinity, in a region determined by pattern information, is enhanced by scanning the beam spot to form an island-like semiconductor film based on the pattern information.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4566043 (1986-01-01), Tamura
patent: 4668089 (1987-05-01), Oshida et al.
patent: 4978970 (1990-12-01), Okazaki
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5803965 (1998-09-01), Yoon
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5886320 (1999-03-01), Gallo et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6043453 (2000-03-01), Arai
patent: 6204099 (2001-03-01), Kusumoto et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6265745 (2001-07-01), Kusumoto et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6396616 (2002-05-01), Fitzer et al.
patent: 6468842 (2002-10-01), Yamazaki et al.
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6700096 (2004-03-01), Yamazaki et al.
patent: 2001/0019861 (2001-09-01), Yamazaki et al.
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2002/0100937 (2002-08-01), Yamazaki et al.
patent: 2003/0089691 (2003-05-01), Tanaka
patent: 2003/0112322 (2003-06-01), Tanaka
patent: 62-104117 (1986-05-01), None
patent: 02-181419 (1990-07-01), None
patent: 04-282869 (1992-10-01), None
patent: 05-315278 (1993-11-01), None
patent: 06-163401 (1994-06-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 07-326769 (1995-12-01), None
patent: 08-78329 (1996-03-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 3221724 (2001-08-01), None
Hara et al., “Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization” AM-LCD '01, pp. 227-330.
Takeuchi et al., “Performance of poly-Si TFTs fabricated by a Stable Scanning CW Laser Crystallization”, AM-LCD '01, pp. 251-254.

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