Ferroelectric thin film element and its manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257S312000, C257S313000, C257SE27006

Reexamination Certificate

active

07115936

ABSTRACT:
In a manufacturing method for a piezoelectric actuator a first electrode layer is formed on substrate, a ferroelectric thin film is formed on the first electrode layer, and an inorganic protective layer4is formed on the ferroelectric thin film. Then, the inorganic protective layer4and the ferroelectric thin film are heat-treated under an oxygen containing atmosphere, and a second electrode layer is formed on an oxidation diffusion layer, wherein the oxidation diffusion layer is formed on a surface of the ferroelectric thin film as a result of component diffusion of the ferroelectric thin film and oxidation of the inorganic protective layer4due to the heat treatment. By using this method, it is possible to improve ferroelectricity without deterioration or cracking of a surface of the ferroelectric thin film.

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