Magnetic storage device, writing method for magnetic storage...

Details Magnetic storage device, writing method for magnetic storage... Magnetic storage device, writing method for magnetic storage...

2006-06-27

2006-06-27

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07068532

ABSTRACT:
A magnetic storage device is disclosed by which reduction of the power consumption and stabilization of a writing characteristic can be achieved. The magnetic storage device includes a plurality of magnetic tunnel junction elements having different coercive forces from each other, and electric current corresponding to the coercive force is supplied to each magnetic tunnel junction element. More particularly, the magnetic storage device includes a plurality of storage element sets each including a magnetic tunnel junction element, and a plurality of power supplies for individually supplying writing currents corresponding to coercive forces of the magnetic tunnel junction elements of the storage element sets. The magnetic tunnel junction element of at least one of the storage element sets has a coercive force different from that of the magnetic tunnel junction element of the other storage element set.

REFERENCES:
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patent: 6856538 (2005-02-01), Hidaka
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T. Miyazaki et al., “Giant magnetic tunneling effect in Fe/Al2)3FE junction”, Journal of Magnetism & Magnetic Materials, vol. 139, L231 (1995).
R. Scheurelein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE ISSCC Digest of Technical Papers, pp. 128-129, Feb. 2000.

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