Pattern forming method, film structure, electro-optical...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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07037833

ABSTRACT:
Exemplary embodiments of the present invention provide a pattern forming method that secures sufficient alignment accuracy when a pattern is formed by droplet ejection. Exemplary embodiments provide a pattern on a substrate by placing a liquid material including a pattern forming material onto the substrate by droplet ejection, including placement of the liquid material including an alignment mark forming material, onto the substrate by the droplet ejection prior to forming the pattern; and placement of the pattern forming material by making use of a placed alignment mark.

REFERENCES:
patent: 5707684 (1998-01-01), Hayes et al.
patent: 6419746 (2002-07-01), Banno et al.
patent: 6503831 (2003-01-01), Speakman
patent: A 7-120611 (1995-05-01), None

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