Dual function FinFET, finmemory and method of manufacture

Details Dual function FinFET, finmemory and method of manufacture Dual function FinFET, finmemory and method of manufacture

2006-08-08

2006-08-08

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S347000, C257SE29300, C257SE27112

Reexamination Certificate

active

07087952

ABSTRACT:
A non-volatile storage cell in a Fin Field Effect Transistor (FinFET) and a method of forming an Integrated Circuit (IC) chip including the non-volatile storage cell. Each FET includes a control gate along one side of a semiconductor (e.g., silicon) fin, a floating gate along an opposite of the fin and a program gate alongside the floating gate. Control gate device thresholds are adjusted by adjusting charge on the floating gate.

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