Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-06
2006-06-06
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S501000
Reexamination Certificate
active
07057226
ABSTRACT:
The present invention provides a semiconductor device in which the gate is self-aligned to the device isolation film and a fabricating method thereof. A device isolation film restricting an active region is disposed on a portion of a semiconductor substrate, and a word line is across over the device isolation film. A gate pattern is disposed between the word line and the active region, and a tunnel oxide film is disposed between the gate pattern and the active region. The gate pattern comprises a floating gate pattern, a gate interlayer dielectric film pattern and a control gate electrode pattern deposited in the respective order, and has a sidewall self-aligned to the device isolation film. To form the gate pattern having the sidewall self-aligned to the device isolation film, a gate insulation film and a gate material film are formed in the respective order on the semiconductor substrate.
REFERENCES:
patent: 4825271 (1989-04-01), Tanaka et al.
patent: 5643813 (1997-07-01), Acocella et al.
patent: 5918125 (1999-06-01), Guo et al.
patent: 6166410 (2000-12-01), Lin et al.
patent: 6590255 (2003-07-01), Ichige et al.
patent: 6791142 (2004-09-01), Tseng
patent: 6794708 (2004-09-01), Mori
Coleman W. David
Lee & Morse P.C.
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