Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-06-06

2006-06-06

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C365S145000

Reexamination Certificate

active

07057221

ABSTRACT:
A semiconductor memory device comprises a ferroelectric element, an electric field applied to the ferroelectric element being controlled to relatively shift a position of a first atom with respect to a position of another atom and to store data at stabilized positions as remanent polarization, wherein the ferroelectric element stores two-bit information by having total four stabilized positions of the first atom, which include first stabilized two positions in a first direction and second stabilized two positions in a second direction perpendicular to the first direction.

REFERENCES:
patent: 3537079 (1970-10-01), Feisel
patent: 5629888 (1997-05-01), Saito et al.
D. Takashima, et al., IEEE Journal of Solid-State Circuits, vol. 33, No. 5, pp. 787-792, “High-Density Chain Ferroelectric Random Access Memory (Chain Fram)”, May 1998.
S. Onishi, et al., IEDM, pp. 843-846, “A Half-Micron Ferroelectric Memory Cell Technology With Stacked Capacitor Structure”, 1994.

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