Gas injection for uniform composition reactively...

Details Gas injection for uniform composition reactively... Gas injection for uniform composition reactively...

2006-11-28

2006-11-28

McDonald, Rodney G. (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298070, C204S298180, C204S298260

Reexamination Certificate

active

07141145

ABSTRACT:
A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of:(a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice;(b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon;(c) generating a sputtered particle flux from the at least one sputtering source;(d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and(e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactive component.

REFERENCES:
patent: 3540993 (1970-11-01), Wurm et al.
patent: 3976555 (1976-08-01), Von Hartel
patent: 4270999 (1981-06-01), Hassan et al.
patent: 5228968 (1993-07-01), Zejda
patent: 5556520 (1996-09-01), Latz
patent: 5620523 (1997-04-01), Maeda et al.
patent: 5728260 (1998-03-01), Brown et al.
patent: 5789322 (1998-08-01), Brown et al.
patent: 6627253 (2003-09-01), Suzuki et al.
patent: 05-311425 (1993-11-01), None
Machine Translation of JP 05-311425.

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