Method for the patterned, selective metallization of a...

Details Method for the patterned, selective metallization of a... Method for the patterned, selective metallization of a...

2006-02-14

2006-02-14

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000, C438S612000, C438S674000, C438S677000, C438S678000, C438S680000, C438S508000

Reexamination Certificate

active

06998346

ABSTRACT:
The present invention provides a method for the patterned metallization of a surface of a substrate, comprising the steps of preheating the substrate to a temperature which is below a deposition temperature of a predetermined metal dissolved in a fluid provided above the surface, and performing patterned deposition of the predetermined metal in predetermined regions on the surface of the substrate by locally increasing the temperature to above the deposition temperature.

REFERENCES:
patent: 4385388 (1983-05-01), Engelking
patent: 4859496 (1989-08-01), Toyonaga et al.
patent: 2001/0023052 (2001-09-01), Koide
patent: 0 182 193 (1986-05-01), None
patent: 0 260 516 (1988-03-01), None

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