Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2006-06-13
2006-06-13
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C438S173000
Reexamination Certificate
active
07060539
ABSTRACT:
An FET device with a source island and a drain island is formed on a horizontal surface of a substrate comprising an insulating material. A channel structure formed over the horizontal surface of the substrate, which connects between the drain and the source, comprises a planar semiconductor channel fin formed above a vertical fin. The planar and vertical fins form a T-shaped cross-section. The bottom of the vertical fin contacts the horizontal surface of the substrate and the planar fin contacts the top of the vertical fin. A gate dielectric layer covers exposed surfaces of the channel structure. A gate electrode straddles the channel gate dielectric and the channel structure. A sacrificial layer, e.g. SiGe, deposited upon the substrate before forming the vertical fin, may be a semiconductor or dielectric material. The planar fin comprises a semiconductor material such as Si, SiGe or Ge.
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Chidambarrao Dureseti
Dokumaci Omer
Dang Phuc T.
Jones Graham S.
Schnurmann H. Daniel
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