Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-05-23
2006-05-23
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S221000, C438S296000, C438S692000
Reexamination Certificate
active
07049239
ABSTRACT:
An STI structure and fabricating method thereof are disclosed. The STI fabricating method comprises forming a pad oxide layer and a first nitride layer on a substrate. A trench is formed by etching the first nitride layer, the pad oxide layer and the substrate. An oxide and a second nitride layer are deposited on the surface of the substrate including the trench. A spacer is formed on the lateral walls of the trench by etching the second nitride layer. A buried oxide is grown in the substrate underneath the trench by performing thermal oxidation on the substrate. The trench is then filled by depositing an insulating layer after removing the spacer and performing a planarization process. The STI fabricating method can reduce substantially a total parasitic capacitance. Therefore, gate RC delay is reduced and the operating speed of a transistor increases. In addition, the STI fabricating method can substantially reduce junction leakage because the junction between the bottom of the source/drain and N-well or P-well is not formed. The STI fabricating method can improve isolation characteristics of P-well and N-well, and increase a circuit design margin due to the improvement of latch-up characteristic.
REFERENCES:
patent: 5547903 (1996-08-01), Hsu
patent: 5962879 (1999-10-01), Ryum et al.
patent: 5972776 (1999-10-01), Bryant
patent: 6207532 (2001-03-01), Lin et al.
patent: 6281562 (2001-08-01), Segawa et al.
patent: 6335247 (2002-01-01), Tews et al.
patent: 6396113 (2002-05-01), Fujinaga et al.
patent: 6479328 (2002-11-01), Kim
patent: 6501117 (2002-12-01), Radens et al.
patent: 6576558 (2003-06-01), Lin et al.
patent: 6689648 (2004-02-01), Ko et al.
patent: 6875663 (2005-04-01), Iwamatsu et al.
patent: 2001/0042890 (2001-11-01), Liang
patent: 2004/0038533 (2004-02-01), Liang
patent: 2004/0132234 (2004-07-01), Ko et al.
patent: 10-19990061132 (1999-07-01), None
Chen Kin-Chan
DongbuAnam Semiconductor Inc.
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
STI structure and fabricating methods thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with STI structure and fabricating methods thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and STI structure and fabricating methods thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3632070