Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-11-21

2006-11-21

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21435, C257S408000, C257S344000, C257S500000, C438S275000

Reexamination Certificate

active

07138689

ABSTRACT:
A semiconductor substrate that has a MOS transistor with a high breakdown voltage having double sidewall insulation films and can inhibit negative effects on the electric characteristics and method thereof. The semiconductor device is formed as a transistor with a configuration having gate insulation film21and gate electrode22formed on semiconductor substrate10, inner sidewall insulation film25formed at least on part of the gate insulation film and on both sides of the gate electrode, outer sidewall insulation film26formed at least on part of the gate insulation film and on both sides of the inner sidewall insulation film, low concentration impurity area23containing an impurity at a low concentration and formed in the semiconductor substrate in the area underneath the inner sidewall insulation film and the outer sidewall insulation film, and high concentration impurity area27containing an impurity at a concentration higher than the low concentration impurity area and formed in the semiconductor substrate in the area underneath both sides of the outer sidewall insulation film.

REFERENCES:
patent: 5091763 (1992-02-01), Sanchez
patent: 5929483 (1999-07-01), Kim et al.
patent: 6348719 (2002-02-01), Chapman

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