Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-10
2006-10-10
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S598000, C438S614000, C438S615000, C438S652000, C438S658000, C438S660000, C438S666000, C438S667000, C438S669000, C438S672000
Reexamination Certificate
active
07119000
ABSTRACT:
The resist film is provided on the surface of the substrate having electrodes, and openings are provided in the resist film at positions of the electrodes on the substrate. The first metal is supplied into the openings. The first metal is then heated to melt and coagulate it. The second metal is then supplied into the openings on the first metal. The first metal and the second metal are heated to melt and coagulate them. The resist film is finally removed. By this method, excellent solder bumps can be formed on the substrate without remnants of the resist film being left on the substrate.
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Sakuyama Seiki
Shimizu Kozo
Fujitsu Limited
Gurley Lynne A.
Westerman, Hattori, Daniels & Adrian , LLP.
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