Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-02-28
2006-02-28
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S030000
Reexamination Certificate
active
07005331
ABSTRACT:
A method for manufacturing a thin film transistor array substrate is disclosed. A first metal layer, a gate insulating layer, a semiconductor layer, an ohmic contact layer and a second metal layer are sequentially formed over a substrate, and a first patterning process is carried out to define a source/drain electrodes area, a scan line area, a data line area, a terminal contact area and a pixel area. An interlayer insulating layer is formed, and a second patterning process is implemented to form a source/drain contact hole, a scan line contact hole and a terminal contact hole. A transparent conductive layer, a third metal layer and a passivation layer are sequentially formed over the substrate to achieve electrical contacts among above-mentioned contact holes, and a third patterning process is then implemented to form a thin film transistor, a scan line, a data line, a terminal contact and a pixel electrode.
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Bacon & Thomas PLLC
Malsawma Lex H.
Quanta Display Inc.
Smith Matthew
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