Termination for trench MIS device having implanted...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S331000, C257S332000, C257S333000, C257S334000, C257S520000

Reexamination Certificate

active

07045857

ABSTRACT:
A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.

REFERENCES:
patent: 5442214 (1995-08-01), Yang
patent: 5578851 (1996-11-01), Hshieh et al.
patent: 5714775 (1998-02-01), Inoue et al.
patent: 6087224 (2000-07-01), Luo
patent: 6465843 (2002-10-01), Hirler et al.
patent: 6498382 (2002-12-01), Hirler et al.
patent: 408078668 (1996-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Termination for trench MIS device having implanted... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Termination for trench MIS device having implanted..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termination for trench MIS device having implanted... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3631437

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.