Programming method for controlling memory threshold voltage...

Details Programming method for controlling memory threshold voltage... Programming method for controlling memory threshold voltage...

2006-08-01

2006-08-01

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185030, C365S185020

Reexamination Certificate

active

07085168

ABSTRACT:
A method for programming one or more memory cells is disclosed. The one or more memory cells need to be two sides operated. After verifying both sides of each memory cell to identify the sides of the memory cells to be programmed, a programming voltage pulse is given to the first sides of the memory cells identified to be programmed. Another verification process is performed for both sides of each memory cell to identify the sides of the memory cells to be programmed. Next, a programming voltage pulse is given to the second sides of the memory cells identified to be programmed. The verifying both sides, programming the first sides, verifying both sides, and programming the second sides will continue until the both sides of each memory cell are programmed to a target programming voltage. The target programming voltage might have multiple voltage levels.

REFERENCES:
patent: 6937511 (2005-08-01), Hsu et al.
patent: 2005/0162922 (2005-07-01), Hsu et al.

Affiliated with

Also associated with

Rating

Programming method for controlling memory threshold voltage... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming method for controlling memory threshold voltage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming method for controlling memory threshold voltage... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3629993