Methods and systems for processing a substrate using a...

Drying and gas or vapor contact with solids – Process – Gas or vapor pressure is subatmospheric

Reexamination Certificate

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C134S031000, C216S084000

Reexamination Certificate

active

07127831

ABSTRACT:
A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

REFERENCES:
patent: 4838289 (1989-06-01), Kottman et al.
patent: 5271774 (1993-12-01), Leenaars et al.
patent: 5660642 (1997-08-01), Britten
patent: 5705223 (1998-01-01), Bunkofske
patent: 5807522 (1998-09-01), Brown et al.
patent: 5882433 (1999-03-01), Ueno
patent: 5945351 (1999-08-01), Mathuni
patent: 5975098 (1999-11-01), Yoshitani et al.
patent: 5989478 (1999-11-01), Ouellette et al.
patent: 5997653 (1999-12-01), Yamasaka
patent: 6230722 (2001-05-01), Mitsumori et al.
patent: 6398975 (2002-06-01), Mertens et al.
patent: 6491764 (2002-12-01), Mertens et al.
patent: 6555017 (2003-04-01), Rushford et al.
patent: 6988327 (2006-01-01), Garcia et al.
patent: 2002/0121290 (2002-09-01), Tang et al.
patent: 2002/0125212 (2002-09-01), Mertens et al.
patent: 2004/0136494 (2004-07-01), Joeri et al.
patent: 0 905 746 (1999-03-01), None
patent: 0 905 747 (1999-03-01), None
patent: 1 489 461 (2004-12-01), None
patent: 1 489 462 (2004-12-01), None
patent: 05837190 (1983-04-01), None
patent: 02280330 (1990-11-01), None
patent: 02309638 (1990-12-01), None
patent: 08277486 (1996-10-01), None
patent: 11031672 (1999-02-01), None
patent: 11350169 (1999-12-01), None
patent: 2003-151948 (2003-05-01), None
patent: WO 99/16109 (1999-04-01), None
patent: WO 99/49504 (1999-09-01), None
patent: WO 02/01613 (2002-01-01), None
patent: WO 02/32825 (2002-04-01), None
patent: WO 02/101795 (2002-12-01), None
patent: WO 03/014416 (2003-02-01), None
patent: WO 04/030051 (2004-04-01), None
PCT International Search Report—PCT/US2004/018900.
J.A. Britten, “A moving-zone Marangoni drying process for critical cleaning and wet processing,” Oct. 1997,Solid State Technology.
International Search Report—PCT/US 03/30718.
Owa, et al., “Immersion Lithography; Its Potential Performance and Issues,”Proceedings of the SPIE, SPIE,Bellingham, VA, vol. 5040, No. 1, Feb. 28, 2003, pp. 724-733, XP002294500, ISSN: 0277-786X.
International Search Report—PCT/US2004/020332.
Lim, et al., “Atomic layer deposition of transition metals”, Department of Chemistry and Chemical Biology, Harvard University, Nature Publishing Group, vol. 2, Nov. 2003, pp. 749-754.
ICKnowledge LLC, “Technology Backgrounder: Atomic Layer Deposition”, ICKnowledge.com, 2004, pp. 1-7.
“Chemical vapor deposition”, Wikipedia, the free encyclopedia, http://en.wikipedia.org/wiki/Chemical vapor deposition,2005, p. 1-2.
Sigma-Aldrich, “Atomic Layer Deposition(ALD)”, http://www.sigmaaldrich.com/Area of Interest/Chemistry/Materials Science/Thin Films, downloaded Jan. 26, 2005, pp. 1-2.

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