Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257SE27006
Reexamination Certificate
active
07122854
ABSTRACT:
A semiconductor memory device includes a memory cell, a side wall insulating film, and an interlayer insulating film. A memory cell includes a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film. The side wall insulating film is formed so as to surround at least sides of the second ferromagnetic film. The interlayer insulating film is formed so as to cover the memory cell and the side wall insulating film.
REFERENCES:
patent: 6229170 (2001-05-01), Sakao
patent: 2002/0146851 (2002-10-01), Okazawa et al.
patent: 2004/0063223 (2004-04-01), Costrini et al.
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, 2000 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp. 128-129.
Masashige Sato, et al., “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Jpn. J. Appl. Phys. vol. 36 (1997) pp. L200-L201.
Huynh Andy
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Taylor Earl
LandOfFree
Semiconductor memory device comprising magneto resistive... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device comprising magneto resistive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device comprising magneto resistive... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3628986