Electrically programmable read-only memory cell

Details Electrically programmable read-only memory cell Electrically programmable read-only memory cell

1995-06-05

1997-04-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257390, H01L 29788, H01L 2976

Patent

active

056212330

ABSTRACT:
EPROM cells include T-shaped floating gates (61, 171) and control gates that surround virtually all of the floating gates (61, 171) except for the portion of the floating gates (61, 171) that lie on a gate dielectric layer (51, 151). The EPROM cells may include customized well regions (22, 122) to allow flash erasing or individual cell erasing for electrically erasable EPROMs. Many different configurations of the memory cells are possible. The configurations of the source regions, drain regions, and well regions (22, 122) may be determined by how a user of the memory cells wants to program or erase the memory cells.

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