Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-02-21

2006-02-21

Nguyen, Ha Tran (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S700000, C257S748000, C257S758000, C257S764000

Reexamination Certificate

active

07002201

ABSTRACT:
The present invention includes one wiring or a plurality of wirings and an MIM capacitor formed by capacity coupling of a lower electrode which is connected to an upper surface of the wiring(s) and an upper electrode. The lower electrode is comprised of a material preventive of diffusion of a material of the wiring(s), and it embraces the wiring(s).

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patent: 2002-9248 (2002-01-01), None
Kajita et al., U.S. Appl. No. 10/153,554 filed Apr. 22, 2002.
Patent Abstracts of Japan Publication No. 2001-203329 dated Jul. 27, 2001.
Patent Abstracts of Japan Publication No. 2001-036010 dated Feb. 9, 2001.

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