Semiconductor device

Details Semiconductor device Semiconductor device

2006-05-09

2006-05-09

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104

Reexamination Certificate

active

07042037

ABSTRACT:
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

REFERENCES:
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 6500678 (2002-12-01), Aggarwal et al.
patent: 6599806 (2003-07-01), Lee
patent: 2004/0051129 (2004-03-01), Paz de Araujo et al.
patent: 10-173138 (1998-06-01), None
patent: 2000-208725 (2000-07-01), None
patent: 2000-260954 (2000-09-01), None

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