Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-06-06
2006-06-06
Pham, Hoai (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S306000, C438S510000, C438S527000
Reexamination Certificate
active
07056814
ABSTRACT:
Methods of manufacturing MOS transistors which are capable of suppressing a short channel effect are disclosed. The short channel effect is suppressed by forming source/drain regions of a shallow junction and sufficiently doping a gate. An illustrated method includes: forming a gate insulating layer and a gate on a semiconductor substrate of a first conductivity type; forming lightly doped drain regions of a second conductivity type within the substrate at opposite sides of the gate; forming spacers on side walls of the gate; forming an insulating buffer layer; exposing a top surface of the gate by performing a planarization process on the insulating buffer layer; doping the gate by implanting impurity ions of the second conductivity type into the top surface of the gate; removing the insulating buffer layer; and forming source/drain regions of the second conductivity type within the substrate at opposite sides of the spacers.
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patent: 1998-041851 (1998-08-01), None
DongbuAnam Semiconductor Inc.
Duong Khanh
Fortney Andrew D.
Pham Hoai
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