Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-01
2006-08-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S598000, C438S615000, C438S643000, C438S645000, C438S652000, C438S653000, C438S659000, C438S678000, C438S679000, C438S680000, C438S626000, C438S627000, C438S629000
Reexamination Certificate
active
07084053
ABSTRACT:
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
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Golzarian Reza M.
Meagley Robert P.
Moinpour Mansour
Morimoto Seiichi
Blakely , Sokoloff, Taylor & Zafman LLP
Fourson George
Intel Corporation
Pham Thanh V.
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