Method of fabricating semiconductor device comprising pixel...

Details Method of fabricating semiconductor device comprising pixel... Method of fabricating semiconductor device comprising pixel...

2006-08-01

2006-08-01

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S161000, C257SE21561

Reexamination Certificate

active

07084019

ABSTRACT:
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

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