Series feram cell array

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S065000, C365S072000

Reexamination Certificate

active

07092276

ABSTRACT:
Memory devices and memory cell groups therefor are disclosed, which comprise series connected ferroelectric (FE) memory cells accessible using a single bitline. The cells individually comprise a transistor and an FE capacitor where a single cell within the group or array is connected to a bitline for external access during read, write, and/or restore operations. Methods are also disclosed for reading target cells in a memory cell group.

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