Process of selectively producing refractory metal silicide unifo

Details Process of selectively producing refractory metal silicide unifo Process of selectively producing refractory metal silicide unifo

1996-11-21

2000-03-07

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438656, 438657, 438592, H01L 214763, H01L 2144, H01L 213205

Patent

active

060339780

ABSTRACT:
Amorphous silicon layers are formed on an n-type single-crystal/poly-crystal layer and a p-type single-crystal/poly-crystal layer, and titanium is sputtered on the amorphous silicon layers; although the n-type dopant impurity are piled on the n-type single-crystal/poly-crystal layers, the amorphous silicon layers takes the piles of n-type dopant impurity thereinto, and promote the silicidation of the titanium layer.

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Nobutoshi Aoki et al., "Anomalous diffusion of lightly . . . Si substrate during N.sub.2 annealing", Appl. Phys. Lett., vol. 64, No. 32, Jun. 6, 1994, pp. 3133-3135.

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