Ion doping device and method of cleaning ion doping system

Details Ion doping device and method of cleaning ion doping system Ion doping device and method of cleaning ion doping system

1995-12-05

2000-03-07

Woodward, Michael P.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438905, 134 12, 134 42, 216 58, 216 67, 118715, 118716, 118723R, H01L 2100

Patent

active

06033973&

ABSTRACT:
A halogen fluoride such as ClF.sub.3 is introduced into the chamber of the doping system. During the doping process, boron adhering to the inner wall of the chamber is changed into gaseous boron fluoride (such as BF.sub.3) and driven off.

REFERENCES:
patent: 4498953 (1985-02-01), Cook et al.
patent: 5563095 (1996-10-01), Frey

Affiliated with

Also associated with

Rating

Ion doping device and method of cleaning ion doping system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion doping device and method of cleaning ion doping system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion doping device and method of cleaning ion doping system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-362520