Polishing slurry for use in CMP of SiC series compound,...

Details Polishing slurry for use in CMP of SiC series compound,... Polishing slurry for use in CMP of SiC series compound,...

2006-02-07

2006-02-07

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S631000, C438S633000, C438S693000

Reexamination Certificate

active

06995090

ABSTRACT:
A polishing slurry for CMP of an SiC series compound film, includes colloidal silica having a primary particle diameter ranging from 5 nm to 30 nm, and at least one acid selected from the group consisting of an amino acid having a benzene ring and an organic acid having a heterocycle.

REFERENCES:
patent: 6090699 (2000-07-01), Aoyama et al.
patent: 6444139 (2002-09-01), Minamihaba et al.
patent: 6611060 (2003-08-01), Toyoda et al.
patent: 2002/0023389 (2002-02-01), Minamihaba et al.
patent: 2004/0018697 (2004-01-01), Chung
patent: 2001-196336 (2001-07-01), None
Minamihaba, G. et al., “Slurry for Chemical Mechanical Polishing and Method of Manufacturing Semiconductor Device,” U.S. Appl. No. 09/932,943, filed Aug. 21, 2001.
Notification of Reasons for Rejection (Office Action) for Japanese Patent Application NO. 2001-398479, dated Apr. 26, 2005.

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