Semiconductor device and semiconductor device manufacturing...

Details Semiconductor device and semiconductor device manufacturing... Semiconductor device and semiconductor device manufacturing...

2006-06-13

2006-06-13

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257S350000, C257S347000, C257S623000

Reexamination Certificate

active

07061054

ABSTRACT:
A semiconductor device has a first and a second semiconductor layer provided on an insulating film on a support substrate. A first memory cell transistor, which constitutes a part of a memory cell in an SRAM, has a first gate electrode of a first conductivity type and first source/drain diffusion layers of a second conductivity type opposite to the first conductivity type. The following expression is fulfilled the thickness of the first conductivity type≦one-third of a length of the first gate electrode in its channel length. A first peripheral transistor, which constitutes a part of a peripheral circuit, has a third gate electrode and a third source/drain diffusion layers. The following expression is satisfied the thickness of the second semiconductor layer>one-third of a length of the third gate electrode in its channel length direction.

REFERENCES:
patent: 5403762 (1995-04-01), Takemura
patent: 5740099 (1998-04-01), Tanigawa
patent: 6424016 (2002-07-01), Houston
patent: 6451708 (2002-09-01), Ha
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6537891 (2003-03-01), Dennison et al.
patent: 6872605 (2005-03-01), Takemura
patent: 2003/0025163 (2003-02-01), Kwon
patent: 2003/0227060 (2003-12-01), Yamauchi
patent: 02263473 (1990-10-01), None
patent: 9-135030 (1997-05-01), None
patent: 10093093 (1998-04-01), None
E.J. Nowak, et al., “A Functional FinFET-DGCMOS SRAM Cell”, International Electron Device Meeting, Technical Digest (USA), 2002, 4 pages.

Affiliated with

Also associated with

Rating

Semiconductor device and semiconductor device manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and semiconductor device manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and semiconductor device manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3623916