Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S639000, C257S640000, C257S751000, C257S774000, C257SE27098
Reexamination Certificate
active
07095083
ABSTRACT:
Methods for making a semiconductor structure are discussed. The methods include forming openings in a high-density area and a high-speed area, and forming a metallization layer simultaneously into the high-density area and the high-speed area. The metallization layer includes a combination of substances and compounds that reduce vertical resistance, reduce horizontal resistance, and inhibit cross-diffusion.
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Cho Chih-Chen
Wang Zhongze
Micro)n Technology, Inc.
Thomas Toniae M.
Wilczewski Mary
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